用于T/R模块的高功率单片金属砷化镓限幅器

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751041

B. Pham, Duy P. Nguyen, A. Pham, Phong D. Le

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引用次数: 9

摘要

本文介绍了一种用于发射/接收模块的高功率单片砷化镓限幅器。在保持输出功率低于100 mW (20 dBm)的同时，该限制器可以维持高达4瓦(36 dBm)的射频输入功率。该限幅器的生存输入功率可达10瓦(40 dBm)。该芯片的带宽为7 ~ 21 GHz。在该频段内，芯片的插入损耗低于2.3 dB，在7 GHz至12 GHz的x频段内，芯片的插入损耗仅为1 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High Power Monolithic pHemt GaAs Limiter for T/R Module

In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this limiter can get up to 10 Watts (40 dBm). This chip obtains a wide bandwidth from 7 to 21 GHz. Within this band, the chip has the insertion loss lower than 2.3 dB and achieves only 1 dB insertion loss in the X-Band from 7 GHz to 12 GHz.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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