Test-circuit-based extraction of inter- and intra-chip MOSFET-performance variations for analog-design reliability

We propose an efficient, test-circuit-based method to determine not only CMOS-device-parameter variations but to simultaneously separate intra-chip from inter-chip variations. The method is demonstrated by using a differential-amplifier stage with feedback coupling as the test-circuit and the drift-diffusion MOSFET model HiSIM for the circuit simulation. The result shows that the proposed test circuit, when constructed only with n-MOSFETs or p-MOSFETs, enables one to separate gate length and channel doping variations as well as their inter- and intra-chip magnitudes in a direct way.