器件仿真程序中的假设和权衡

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274087

M. Lundstrom

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引用次数: 1

摘要

作者考察了器件仿真程序的物理假设，并考虑了它们对先进双极晶体管的影响。讨论了漂移扩散方程的极限，并介绍了流体力学和蒙特卡罗方法等先进技术。对未来双极晶体管的器件仿真要求也提出了一些看法。

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Assumptions and trade-offs in device simulation programs

The author examines the physical assumptions which underlie device simulation programs and considers their implications for advanced bipolar transistors. The limits of drift-diffusion equations are discussed, and advanced techniques such as hydrodynamic and Monte Carlo approaches are described. Some thoughts on the device simulation requirements for future generation bipolar transistors are also presented.<>

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Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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