{"title":"一个设计指南的3级CMOS嵌套Gm-C运算放大器与面积或电流最小化","authors":"Jae-Seung Lee, J. Sim, Hong-June Park","doi":"10.1109/SOCDC.2008.4815671","DOIUrl":null,"url":null,"abstract":"A systematic design guide for 3-stage CMOS operational amplifier (op amp) with nested Gm-C frequency compensation (NGCC) was proposed. With the given specification such as gain-bandwidth (GB), the ratio of high frequency pole to GB, phase margin, input common-mode range, and load capacitance, the guide generates the design parameters that minimize total area or current. The test chip designed by the proposed guide was fabricated with a 0.18-mum CMOS process. The simulation results show reasonable performances with 1.2-V supply voltage, and the measurement results show low-voltage operations of the designed op amps with 0.6-V supply voltage.","PeriodicalId":405078,"journal":{"name":"2008 International SoC Design Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A design guide for 3-stage CMOS nested Gm-C operational amplifier with area or current minimization\",\"authors\":\"Jae-Seung Lee, J. Sim, Hong-June Park\",\"doi\":\"10.1109/SOCDC.2008.4815671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A systematic design guide for 3-stage CMOS operational amplifier (op amp) with nested Gm-C frequency compensation (NGCC) was proposed. With the given specification such as gain-bandwidth (GB), the ratio of high frequency pole to GB, phase margin, input common-mode range, and load capacitance, the guide generates the design parameters that minimize total area or current. The test chip designed by the proposed guide was fabricated with a 0.18-mum CMOS process. The simulation results show reasonable performances with 1.2-V supply voltage, and the measurement results show low-voltage operations of the designed op amps with 0.6-V supply voltage.\",\"PeriodicalId\":405078,\"journal\":{\"name\":\"2008 International SoC Design Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2008.4815671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2008.4815671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
提出了一种嵌套Gm-C频率补偿(NGCC)的3级CMOS运算放大器的系统设计指南。根据给定的规格,如增益带宽(GB)、高频极与GB的比值、相位裕度、输入共模范围和负载电容,导轨产生使总面积或电流最小的设计参数。利用该波导设计的测试芯片采用0.18 μ m CMOS工艺制作。仿真结果表明,该运放在1.2 v供电电压下性能良好,测量结果表明,该运放在0.6 v供电电压下可以实现低电压工作。
A design guide for 3-stage CMOS nested Gm-C operational amplifier with area or current minimization
A systematic design guide for 3-stage CMOS operational amplifier (op amp) with nested Gm-C frequency compensation (NGCC) was proposed. With the given specification such as gain-bandwidth (GB), the ratio of high frequency pole to GB, phase margin, input common-mode range, and load capacitance, the guide generates the design parameters that minimize total area or current. The test chip designed by the proposed guide was fabricated with a 0.18-mum CMOS process. The simulation results show reasonable performances with 1.2-V supply voltage, and the measurement results show low-voltage operations of the designed op amps with 0.6-V supply voltage.