一个设计指南的3级CMOS嵌套Gm-C运算放大器与面积或电流最小化

Jae-Seung Lee, J. Sim, Hong-June Park
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引用次数: 2

摘要

提出了一种嵌套Gm-C频率补偿(NGCC)的3级CMOS运算放大器的系统设计指南。根据给定的规格,如增益带宽(GB)、高频极与GB的比值、相位裕度、输入共模范围和负载电容,导轨产生使总面积或电流最小的设计参数。利用该波导设计的测试芯片采用0.18 μ m CMOS工艺制作。仿真结果表明,该运放在1.2 v供电电压下性能良好,测量结果表明,该运放在0.6 v供电电压下可以实现低电压工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A design guide for 3-stage CMOS nested Gm-C operational amplifier with area or current minimization
A systematic design guide for 3-stage CMOS operational amplifier (op amp) with nested Gm-C frequency compensation (NGCC) was proposed. With the given specification such as gain-bandwidth (GB), the ratio of high frequency pole to GB, phase margin, input common-mode range, and load capacitance, the guide generates the design parameters that minimize total area or current. The test chip designed by the proposed guide was fabricated with a 0.18-mum CMOS process. The simulation results show reasonable performances with 1.2-V supply voltage, and the measurement results show low-voltage operations of the designed op amps with 0.6-V supply voltage.
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