Sub-THz interconnect channel for planar chip-to-chip communication

This article presents the dielectric waveguide based sub-THz interconnect channels for high bandwidth-density and high energy-efficiency chip-to-chip communications. Both far-field and near-field transition based channels are analyzed and demonstrated. The insertion losses of the interconnect with far-field transitions and near-field transitions are about 8.4 dB with 12.6 GHz 3-dB bandwidth and 4.0 dB with 59 GHz 3-dB bandwidth, respectively.