低电压，高性能的InAs/AlSb hemt，在100 mV漏极偏压下功率增益高于100 GHz

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367888

J. Bergman, G. Nagy, G. Sullivan, A. Ikhlassi, B. Brar

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引用次数: 25

摘要

超低功耗电路要求晶体管在低偏置电压和电流下具有可用的射频增益。在本文中，我们报道了100 nm栅极长度的InAs/AlSb HEMTs，其f/sub /spl tau//和f/sub max/ /在仅100 mV的漏极偏置下均超过100 GHz。该器件还显示出235 GHz的f/sub /spl tau//峰值，并且据我们所知，在300 mV的更高漏极偏置下，f/sub max/ /记录为235 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias

Ultra-low power circuits require transistors with usable RF gain at low bias voltages and currents. In the present paper, we report 100 nm gate-length InAs/AlSb HEMTs with f/sub /spl tau// and f/sub max/ both exceeding 100 GHz at a mere 100 mV of drain bias. The devices also show excellent peak value for f/sub /spl tau// of 235 GHz and, to the best of our knowledge, a record f/sub max/ of 235 GHz at a higher drain bias of 300 mV.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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