1伏温度传感器,输出占空比调制,采用0.18 μm CMOS技术

M. Abdollahpour, A. Heidari
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引用次数: 2

摘要

本文介绍了一种采用0.18μm标准CMOS技术实现的低电压、高能效智能温度传感器的设计。基于bjt的传感器将PTAT和CTAT电流转换为占空比与温度成正比的方波输出。通过近似解析计算,发现了集成接口在低压设计中的主要局限性,其最小电源电压为1.5 V。接下来,对设计进行修改,使我们的原理适用于1V电源。完整传感器的仿真结果表明,在-40℃~ 110℃温度范围内误差小于0.5℃。然而,由于泄漏电流的影响,该误差在130℃时上升到3℃左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1-volt temperature sensor with duty-cycle-modulated output in 0.18 μm CMOS technology
This paper describes the design of a low-voltage, energy-efficient smart temperature sensor to be implemented in 0.18μm standard CMOS technology. The BJT-based sensor converts the PTAT and CTAT currents to a square-wave output with a duty cycle proportional to the temperature. The main limitations of the integrated interface for low-voltage design is found from an approximating analytical calculation, which shows that the minimum supply voltage was 1.5 V. Next, the design was modified to make our principle working for a 1V supply. Simulation results of the complete sensor show that the error in temperature range of -40°C to 110°C is less than 0.5°C. However, due to the influence of leakage currents, this error rises to about 3°C for 130°C.
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