{"title":"i层和n层GaAs管脚二极管中深能级中心的研究","authors":"J. Toompuu, O. Korolkov, N. Sleptsuk, T. Rang","doi":"10.1109/BEC.2014.7320547","DOIUrl":null,"url":null,"abstract":"This work presents the results of capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron trap EL2 and to determine its concentration distribution. Suggested a possible interaction of hole traps A and B with the electron traps EL2.","PeriodicalId":348260,"journal":{"name":"2014 14th Biennial Baltic Electronic Conference (BEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigation of deep level centers in i- and n-layers of GaAs pin - diodes\",\"authors\":\"J. Toompuu, O. Korolkov, N. Sleptsuk, T. Rang\",\"doi\":\"10.1109/BEC.2014.7320547\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the results of capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron trap EL2 and to determine its concentration distribution. Suggested a possible interaction of hole traps A and B with the electron traps EL2.\",\"PeriodicalId\":348260,\"journal\":{\"name\":\"2014 14th Biennial Baltic Electronic Conference (BEC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 14th Biennial Baltic Electronic Conference (BEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BEC.2014.7320547\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 14th Biennial Baltic Electronic Conference (BEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEC.2014.7320547","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of deep level centers in i- and n-layers of GaAs pin - diodes
This work presents the results of capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron trap EL2 and to determine its concentration distribution. Suggested a possible interaction of hole traps A and B with the electron traps EL2.