i层和n层GaAs管脚二极管中深能级中心的研究

2014 14th Biennial Baltic Electronic Conference (BEC) Pub Date : 2014-10-01 DOI:10.1109/BEC.2014.7320547

J. Toompuu, O. Korolkov, N. Sleptsuk, T. Rang

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引用次数: 3

摘要

本文介绍了基于GaAs p+-pin-n+结构的特殊肖特基二极管样品的电容电压(C-V)，电流电压(I-V)和深能级瞬态光谱(dts)的结果。结果表明，在i层和与i层相邻的n区观察到“异常”的稳态电容温度变化。DLTS光谱分析可以识别电子陷阱EL2并确定其浓度分布。提出空穴阱a和B可能与电子阱EL2相互作用。

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Investigation of deep level centers in i- and n-layers of GaAs pin - diodes

This work presents the results of capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron trap EL2 and to determine its concentration distribution. Suggested a possible interaction of hole traps A and B with the electron traps EL2.

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2014 14th Biennial Baltic Electronic Conference (BEC)

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