硅中冲击电离产生的空穴的灵敏探测

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242281

H. Firdaus, M. Hori, Y. Takahashi, A. Fujiwara, Y. Ono

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引用次数: 0

摘要

冲击电离[1,2]，或带电粒子产生的电子-空穴对，一直是半导体物理和器件的核心问题之一。然而，由于其过程的复杂性，大多数实验研究和分析都是宏观的和现象学的。这种情况阻碍了我们探索碰撞电离和半导体中高能带电粒子的基本物理。

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Sensitive detection of holes generated by impact ionization in silicon

Impact ionization [1,2], or electron-hole pair creation by charged particles, has been one of the central issues of semiconductor physics and devices. However, due to its complexity of the process, most experimental studies and their analyses have been macroscopic and phenomenological. This situation prevents us from exploring the fundamental physics of impact ionization and of high-energy charged particles in semiconductors.

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2017 Silicon Nanoelectronics Workshop (SNW)

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