{"title":"一种基于2gb /s 60ghz传输门的130nm CMOS开关键控调制器","authors":"N. Sarimin, Rahma Abdaoui, C. Anghel","doi":"10.1109/ICECS.2016.7841222","DOIUrl":null,"url":null,"abstract":"A 2-Gb/s 60GHz On-Off Keying modulator for low-power and high-speed applications is demonstrated in this paper. The modulator uses a transmission-gate to selectively block or pass the input signal. Overall, the modulator circuit achieves a maximum data rate of 2-Gb/s, 20dB On and Off isolation, and power consumption of 13.2mW for a supply voltage of 1.2V.","PeriodicalId":205556,"journal":{"name":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 2-Gb/s 60 GHz transmission-gate based 130nm CMOS on-off keying modulator\",\"authors\":\"N. Sarimin, Rahma Abdaoui, C. Anghel\",\"doi\":\"10.1109/ICECS.2016.7841222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2-Gb/s 60GHz On-Off Keying modulator for low-power and high-speed applications is demonstrated in this paper. The modulator uses a transmission-gate to selectively block or pass the input signal. Overall, the modulator circuit achieves a maximum data rate of 2-Gb/s, 20dB On and Off isolation, and power consumption of 13.2mW for a supply voltage of 1.2V.\",\"PeriodicalId\":205556,\"journal\":{\"name\":\"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2016.7841222\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2016.7841222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2-Gb/s 60 GHz transmission-gate based 130nm CMOS on-off keying modulator
A 2-Gb/s 60GHz On-Off Keying modulator for low-power and high-speed applications is demonstrated in this paper. The modulator uses a transmission-gate to selectively block or pass the input signal. Overall, the modulator circuit achieves a maximum data rate of 2-Gb/s, 20dB On and Off isolation, and power consumption of 13.2mW for a supply voltage of 1.2V.