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引用次数: 33
摘要
对提供低功耗的全集成射频电路的需求持续增长，同时对高性能的强烈需求也在不断增长。本文详细介绍了一种提高共门LNA性能的设计方案。通过使用gm增强技术改善了噪声性能，而使用电流复用技术改善了增益性能。提出的解决方案缓解了与公共源-公共源当前-重用拓扑相关的问题。该技术在0.18 μ m CMOS设计中得到验证，其5.4 GHz LNA实现了>20 dB增益，<3 dB NF，功耗仅为2.7 mW。
A g/sub m/-Boosted Current-Reuse LNA in 0.18/spl mu/m CMOS
Demand for fully-integrated RF circuits offering low power consumption continues to grow, along with a strong desire for high performance. In this paper a design that enhances the performance of the common-gate LNA is detailed. The noise performance is improved through the use of a gm-boosting technique, while the gain performance is improved using current-reuse techniques. The proposed solution alleviates the issues related to the common-source-common-source current-reuse topologies. The technique is validated with a design in 0.18 mum CMOS, with a 5.4 GHz LNA which achieves >20 dB of gain, <3 dB NF and consumes only 2.7 mW of power.
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