高压DMOS功率器件的高温准饱和模型

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI:10.1109/HKEDM.2002.1029162

C.L. Yang, J. Kuo

{"title":"高压DMOS功率器件的高温准饱和模型","authors":"C.L. Yang, J. Kuo","doi":"10.1109/HKEDM.2002.1029162","DOIUrl":null,"url":null,"abstract":"This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-temperature quasi-saturation model of high-voltage DMOS power devices\",\"authors\":\"C.L. Yang, J. Kuo\",\"doi\":\"10.1109/HKEDM.2002.1029162\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.\",\"PeriodicalId\":154545,\"journal\":{\"name\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2002.1029162\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2002.1029162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文采用闭式准饱和模型分析了高压DMOS器件的高温(300 K-400 K)准饱和行为。基于解析模型，在较高的温度下，由于饱和速度较小，在较小的栅极电压下发生准饱和行为，这一点得到了MEDICI结果的验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-temperature quasi-saturation model of high-voltage DMOS power devices

This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

自引率

0.00%

发文量