I-V characteristic effects of fluidic-based memristor for glucose concentration detection

The I-V characteristic effect of thin film TiO2 fluidic-based memristor sensor utilized in sensing various glucose concentrations is described in this paper. Four different glucose concentrations, namely, 5, 10, 20, and 30 mM, are prepared and applied to the sensor. The device is then characterized with Keithley 4200-SCS semiconductor characterization system. Results show that different concentration levels of glucose affect the I-V characteristic of the sensor device. The difference is observed at the first voltage sweep of 0 V to 3 V after glucose was applied. A uniform change in current was recorded for small voltages below 0.9 V. The current decreases as the glucose concentration increases. Analysis shows that the resistance of the memristor sensor increases with the increase in glucose concentration through a quadratic relation.