半导体微腔中的热效应和横向结构

I. Perrini, T. Maggipinto, M. Brambilla, G. Tissoni, L. Spinelli, L. Lugiato
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引用次数: 0

摘要

我们建立了一个模型来描述由外部相干场驱动的半导体微腔的时空动力学,包括晶格热场的扩散动力学。这使我们能够描述由于热动力学引起的时空效应,特别是关于模式形成的空腔孤子。我们考虑了在被动配置中的散装介质的情况,遵循先前引入的建模,以及在主动配置中的多量子阱(MQW)介质的情况,也就是说,该设备被电泵浦,表现为放大器,遵循另一个先前引入的模型。通过对齐次稳态进行线性稳定性分析,分析了影响系统的不稳定性,并对描述电场、载流子和温度动力学的方程进行了数值积分,给出了主要的数值结果。热效应的加入引入了Hopf不稳定性,该不稳定性在参数空间的某一区域支配着系统的行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal effects and transverse structures in semiconductor microcavities
We formulate a model to describe the spatio-temporal dynamics of a semiconductor microcavity driven by an external coherent field, including the diffusive dynamics of the lattice thermal field. This allows us to describe the spatio-temporal effects due to the thermal dynamics with regard to pattern formation and especially cavity solitons. We consider both the case of a bulk medium in a passive configuration, following a previously introduced modelisation, and the case of a multiple quantum well (MQW) medium in an active configuration, that is, the device is electrically pumped, behaving as an amplifier, following another previously introduced model. We analyse the instabilities affecting the system by performing the linear stability analysis of the homogeneous steady state, and we perform the numerical integration of the equations describing the electric field, carrier and temperature dynamics, and we show the main numerical results. The inclusion of thermal effects introduces a Hopf instability which, in certain region of the parameter space, dominates the behaviour of the system.
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