Solution-processed zinc-tin oxide thin-film transistors with high performance and improved uniformity

Amorphous metal-oxide semiconductors have attracted a significant amount of attention in the past few years because of their high mobility, stability in ambient air and potential to be processed by solution approaches. Performance uniformity throughout a sample is very important for all kinds of solution processes, including spin coating, inkjet printing and drop casting. Thickness variation [1] and annealing process are two main sources of performance fluctuation. In this study, we combined solution-processed zinc tin oxide (ZTO) and solution-processed high-k dielectric, ZrO2 [2], to study the effect of pre-bake before the ZTO annealing on the device performance and performance uniformity. A top contact structure (Fig. 1) is employed while the substrate and the gate electrode are glass and AuPd, respectively.