J. Chen, M. Freitag, J. Tsang, Q. Fu, Jie Liu, P. Avouris
{"title":"悬浮碳纳米管晶体管的增强电致发光","authors":"J. Chen, M. Freitag, J. Tsang, Q. Fu, Jie Liu, P. Avouris","doi":"10.1109/DRC.2005.1553105","DOIUrl":null,"url":null,"abstract":"In this work, we report the first electroluminescence results from suspended CNTFETs. We find not only an increase in quantum efficiency by 2-3 orders of magnitude, but a completely different dependence of the light emission on the electrical properties of the CNTFET. To fabricate a suspended CNTFET, we etched 2-10 mum wide trenches in 200 nm thick SiO2 on Si wafers","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced electroluminescence in suspended carbon nanotube transistors\",\"authors\":\"J. Chen, M. Freitag, J. Tsang, Q. Fu, Jie Liu, P. Avouris\",\"doi\":\"10.1109/DRC.2005.1553105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report the first electroluminescence results from suspended CNTFETs. We find not only an increase in quantum efficiency by 2-3 orders of magnitude, but a completely different dependence of the light emission on the electrical properties of the CNTFET. To fabricate a suspended CNTFET, we etched 2-10 mum wide trenches in 200 nm thick SiO2 on Si wafers\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553105\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced electroluminescence in suspended carbon nanotube transistors
In this work, we report the first electroluminescence results from suspended CNTFETs. We find not only an increase in quantum efficiency by 2-3 orders of magnitude, but a completely different dependence of the light emission on the electrical properties of the CNTFET. To fabricate a suspended CNTFET, we etched 2-10 mum wide trenches in 200 nm thick SiO2 on Si wafers