一种具有低正向压降和高电流增益的AlGaAs/GaAs异源双极型静态感应晶体管(HBSIT)

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583759

K. Nonaka, Y. Ishikawa, S. Yokoyama, M. Abe, T. Kamiyama

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摘要

研制了一种新型550 V AlGaAs/GaAs异质源双极型静态感应晶体管(HBSIT)。GaAs HBSIT被认为在导态特性上优于传统的硅功率器件。例如，当电流增益为150，漏极电流密度为100 A/cm/sup /时，正向压降为0.3 V。

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An AlGaAs/GaAs hetero source bipolar mode static induction transistor (HBSIT) with low forward voltage drop and high current gain

A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density of 100 A/cm/sup 2/.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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