RRAM单元对光故障注入攻击的敏感性评估

2020 23rd Euromicro Conference on Digital System Design (DSD) Pub Date : 2020-08-01 DOI:10.1109/DSD51259.2020.00047

D. Petryk, Z. Dyka, E. Pérez, Mamathamba Kalishettyhalli Mahadevaiaha, I. Kabin, C. Wenger, P. Langendörfer

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引用次数: 3

摘要

电阻式随机存取存储器(RRAM)是一种非易失性存储器(NVM)。本文详细研究了采用250 nm CMOS IHP技术实现的TiN/Ti/Al:HfO2/TiN基1T-1R RRAM电池对激光辐照的敏感性。实验结果表明，激光照射下影响细胞状态的方法是可行的，即成功的光学故障注入。重点讨论了激光站参数的选择及其对光学故障注入成功的影响。

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Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks

Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail. Experimental results show the feasibility to influence the state of the cells under laser irradiation, i.e. successful optical Fault Injection. We focus on the selection of the parameters of the laser station and their influence on the success of optical Fault Injections.

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2020 23rd Euromicro Conference on Digital System Design (DSD)

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