Cu2ZnSn(S,Se)4薄膜太阳能电池原子层沉积制备Zn(O,S)缓冲层

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173241

Hee Kyeung Hong, Inyoung Kim, Hui Kyung Park, Jaeseung Jo, Gwang Yeom Song, J. H. Kim, Jaeyeong Heo

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摘要

太阳能电池是一种将光能转化为电能的电子装置。实现高性能薄膜太阳能电池的关键部分之一是n型缓冲层。我们研究了用锌(O,S)作为原子层沉积(ALD)生长的替代材料的可能性，而不是广泛使用但有毒的CdS缓冲层。首先，研究了Zn(O,S)薄膜的结构、电学、化学和光学性质。此外，将该缓冲层应用于储量丰富的Cu2ZnSn(S,Se)4太阳能电池中，通过优化氧硫比(O/S)，获得了最高的功率转换效率(PCE， η) ~2.7%。

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Zn(O,S) buffer layers grown by atomic layer deposition in Cu2ZnSn(S,Se)4 thin film solar cells

A solar cell is an electrical device that converts light energy into electricity. One of the crucial parts of realizing high-performance thin-film-based solar cells is an n-type buffer layer. Instead of the widely used, but toxic CdS buffer layer, we investigated the possibility of using Zn(O,S) as an alternative material grown by atomic layer deposition (ALD). First of all, structural, electrical, chemical, and optical properties of Zn(O,S) thin films were studied. In addition, this new buffer layer was applied for earth-abundant Cu2ZnSn(S,Se)4 solar cells and the highest power-conversion efficiency (PCE, η) of ~2.7% was achieved by optimizing oxygen-to-sulfur (O/S) ratio.

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2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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