使用选择性MOVPE生长和双帽程序的InAs/InP量子点宽带LED

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516168

K. Shimomura, Y. Suzuki, Y. Saito, F. Kawashima

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引用次数: 3

摘要

成功演示了光谱宽度超过450 nm的InAs/InP量子点宽带LED。利用选择性MOVPE技术制备的高度控制双帽工艺和应变控制缓冲层获得了宽带频谱。

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InAs/InP QDs broadband LED using selective MOVPE growth and double-cap procedure

InAs/InP QDs broadband LED more than 450 nm spectrum width was successfully demonstrated. The broadband spectrum was obtained from the height controlled double-cap procedure and strain controlled buffer layer fabricated by the selective MOVPE technique.

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来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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