1.23 ghz 16kb可编程sram通用处理65nm加速器

Amitesh Sridharan, Shaahin Angizi, Sai Kiran Cherupally, Fan Zhang, Jae-sun Seo, Deliang Fan
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引用次数: 3

摘要

我们提出了一种基于8T-SRAM阵列的通用可编程sram处理(PSRAM)加速器芯片设计,以适应一套完整的布尔逻辑运算(例如,NOR/NAND/XOR, 2和3输入),多数加法器和全加法器,首次在一个周期内完成。PSRAM提供了内存计算平台所需的可编程性,可用于各种应用程序,如并行矢量操作、神经网络和数据加密。该原型设计在一个大小为16kb的SRAM宏中实现,展示了迄今为止运行速度最快的可编程内存计算系统之一,工作频率为1.23 GHz。65nm原型芯片在1.2 v下实现了1.2 TOPS的系统级峰值吞吐量和34.98 TOPS/W的能效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.23-GHz 16-kb Programmable and Generic Processing-in-SRAM Accelerator in 65nm
We present a generic and programmable Processing-in-SRAM (PSRAM) accelerator chip design based on an 8T-SRAM array to accommodate a complete set of Boolean logic operations (e.g., NOR/NAND/XOR, both 2- and 3-input), majority, and full adder, for the first time, all in a single cycle. PSRAM provides the programmability required for in-memory computing platforms that could be used for various applications such as parallel vector operation, neural networks, and data encryption. The prototype design is implemented in a SRAM macro with size of 16 kb, demonstrating one of the fastest programmable in-memory computing system to date operating at 1.23 GHz. The 65nm prototype chip achieves system-level peak throughput of 1.2 TOPS, and energy-efficiency of 34.98 TOPS/W at 1.2V.
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