锗器件中重掺杂多晶锗扩散实现浅结和接触

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874673

Kezheng Li, Yuan Hongyu, K. H. Kong, H. Gamble, D. McNeill, M. Armstrong

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引用次数: 0

摘要

综上所述，我们证明了一种独特的方法，即通过从聚锗中向外扩散磷来获得高质量的浅n+/p结。介绍了LPCVD沉积多锗的工艺及关键问题。从二极管的I-V特性分析结果可以看出，将聚锗用于结和触点的实现是可行的。

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Shallow junction and contact realization by diffusion of heavily doped polycrystalline-germanium for Ge devices

In conclusion, a unique method to achieve high quality shallow n+/p junction by out-diffusion of phosphorus from poly-Ge has been demonstrated. The technology and key issues of poly-Ge deposition by LPCVD is presented. Results shown from diode I-V characteristics indicate feasibility of poly-Ge used for junction and contact realization.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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