超低R/sub / 12v p沟道MOSFET

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764122

D. Kinzer, D. Asselanis, R. Carta

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引用次数: 6

摘要

本文介绍了一种用于便携式的高密度沟槽p沟道MOSFET。这些场效应管需要具有极低的R/子差/栅极驱动器，限制在单节锂离子电池电压低至2.5 V。这款SO8封装的12 V场效应管在4.5 V/sub - gs/下仅测量5 m/spl Omega/，在2.5 V/sub - gs/下测量7 m/spl Omega/。排除封装和顶部金属电阻，这对应于特定的R/sub - son/分别为21.6和37.0 m/spl ω /-mm/sup 2/。这些设备的典型应用包括手机和笔记本电脑中的电池充电和负载切换。

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Ultra-low R/sub dson/ 12 V P-channel trench MOSFET

This paper describes a high density trench P-channel MOSFET for portable applications. These FETs are required to have extremely low R/sub dson/ with gate drives limited by single cell Li-ion battery voltage as low as 2.5 V. This 12 V FET in an SO8 package measures only 5 m/spl Omega/ at 4.5 V/sub gs/, and 7 m/spl Omega/ at 2.5 V/sub gs/. Eliminating package and top metal resistance, this corresponds to a specific R/sub dson/ of 21.6 and 37.0 m/spl Omega/-mm/sup 2/, respectively. Typical applications for these devices include battery charging and load switching in cell phones and laptops.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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