采用0.15µm GaAs pHEMT技术的低相位噪声ka波段压控振荡器

2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS) Pub Date : 2012-04-18 DOI:10.1109/DDECS.2012.6219029

H. Kao, S. Shih, C. Yeh, Li-Chun Chang

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引用次数: 3

摘要

提出了一种采用双交叉耦合对结构和电容分裂技术的低相位噪声、低功耗和小尺寸ka波段压控振荡器(VCO)。ka波段压控振荡器电路采用0.15 μm GaAs pHEMT技术。VCO具有低相位噪声，在1 MHz偏移时为-116.36 dBc/Hz，可在30.5至31.22 GHz范围内调谐。性能因数(FOM)为-192.36 dBc/Hz。芯片面积为1.04 mm2的VCO在1 V电源下的功耗为24 mW。

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A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology

A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 μm GaAs pHEMT technology. The VCO has low phase noise, of -116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36 dBc/Hz. The power consumption of the VCO with 1.04 mm2 chip area was 24 mW, from a 1 V power supply.

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2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)

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