一种无电感低噪声放大器电路设计的非侵入式自校正方法

Wenrun Xiao, Weikang Wu, Yin-Wei Chang, Jidong Diao, Yanping Qiao, Xianming Liu, Shan He, Xiaojie Liu, Donghui Guo
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引用次数: 1

摘要

本文基于非侵入式自校准对无电感LNA的NF和S11进行了校准。由于无电感LNA的NF和S11取决于晶体管的跨导和沟道电阻,而晶体管的跨导和沟道电阻与晶体管的端口电压有关,因此我们使用LNA测量的直流电压来估计其NF和S11。此外,我们选择LNA的偏置电流和为PMOS偏置晶体管提供电流的电流反射镜的比率作为调谐旋钮来调节LNA的S11和NF。为了实现非侵入式自校准,利用虚拟电路测量的直流电压和电流来估计LNA的S11和NF。使用不同的假人尺寸,我们发现假人尺寸和校准结果之间存在权衡。电路采用22nm超低漏CMOS技术实现,并利用Matlab实现了标定算法。仿真结果表明,采用1/2比例电流镜测量直流电压时,产率可提高15.5%;采用不同虚拟电路组测量直流电压和电流时,产率可提高11% ~ 16.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Non-Intrusive Self-Calibration Method for the Circuit Design of Inductorless Low Noise Amplifier
This paper calibrates an inductorless LNA’s NF and S11 based on non-intrusive self-calibration. Since the NF and S11 of the inductorless LNA depend on transconductance and channel resistance of transistors which have a relationship with the transistors’ port voltage, we use measured dc voltage from the LNA to estimate its NF and S11. Also, we choose the LNA’s bias current and the ratio of the current mirror providing current for PMOS bias transistor as tuning knobs to adjust the LNA’s S11 and NF. To realize non-intrusive self-calibration, measured dc voltage and currents from dummy circuits are used to estimate the LNA’s S11 and NF. Different dummy sizes are used, and we find that there is a trade-off between dummy size and calibration results. The circuits are implemented in 22-nm ultra-low leakage CMOS technology and the calibration algorithm was implemented with Matlab. The simulation results show that a 15.5% yield improvement could be obtained when dc voltages are measured from the primary LNA with current from a 1/2 scaled current mirror and a yield improvement from 11% to 16.5% could be obtained when dc voltages and currents are measured from different sets of dummy circuits.
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