低温干氮退火后电子束蒸发沉积La/sub 2/O/sub 3薄膜的空间电荷限制电流传导[栅极氧化物应用]

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356493

Y. Kim, S. Ohmi, K. Tsutsui, H. Iwai

{"title":"低温干氮退火后电子束蒸发沉积La/sub 2/O/sub 3薄膜的空间电荷限制电流传导[栅极氧化物应用]","authors":"Y. Kim, S. Ohmi, K. Tsutsui, H. Iwai","doi":"10.1109/ESSDER.2004.1356493","DOIUrl":null,"url":null,"abstract":"Lanthanum oxide (La/sub 2/O/sub 3/) was deposited by e-beam evaporation on n-Si(100), and annealed at 200/spl deg/C in dry-nitrogen ex-situ for 5 min. From the applied voltage and temperature dependences of the current of the gate oxide, it has been shown that the main conduction mechanisms are SCLC (space-charge-limited current) and Schottky conductions at low and high applied voltages, respectively. Trap levels in the oxide band gap, composed of both exponential and localized distributions, were extracted by using the differential method. The dielectric constant obtained from Schottky conduction was 27 and was consistent with the C-V results.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Space-charge-limited current conductions in La/sub 2/O/sub 3/ thin films deposited by e-beam evaporation after low temperature dry-nitrogen annealing [gate oxide applications]\",\"authors\":\"Y. Kim, S. Ohmi, K. Tsutsui, H. Iwai\",\"doi\":\"10.1109/ESSDER.2004.1356493\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lanthanum oxide (La/sub 2/O/sub 3/) was deposited by e-beam evaporation on n-Si(100), and annealed at 200/spl deg/C in dry-nitrogen ex-situ for 5 min. From the applied voltage and temperature dependences of the current of the gate oxide, it has been shown that the main conduction mechanisms are SCLC (space-charge-limited current) and Schottky conductions at low and high applied voltages, respectively. Trap levels in the oxide band gap, composed of both exponential and localized distributions, were extracted by using the differential method. The dielectric constant obtained from Schottky conduction was 27 and was consistent with the C-V results.\",\"PeriodicalId\":287103,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"volume\":\"150 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDER.2004.1356493\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

采用电子束蒸发法在n-Si(100)上沉积氧化镧(La/sub 2/O/sub 3/)，并在200/spl度/C干氮非原位退火5 min。从外加电压和温度对栅极氧化物电流的依赖关系可以发现，在低电压和高电压下，氧化镧的主要传导机制分别是SCLC(空间电荷限制电流)和Schottky传导。利用微分法提取了氧化物带隙中由指数分布和局域分布组成的陷阱能级。由肖特基传导得到的介电常数为27，与C-V结果一致。

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Space-charge-limited current conductions in La/sub 2/O/sub 3/ thin films deposited by e-beam evaporation after low temperature dry-nitrogen annealing [gate oxide applications]

Lanthanum oxide (La/sub 2/O/sub 3/) was deposited by e-beam evaporation on n-Si(100), and annealed at 200/spl deg/C in dry-nitrogen ex-situ for 5 min. From the applied voltage and temperature dependences of the current of the gate oxide, it has been shown that the main conduction mechanisms are SCLC (space-charge-limited current) and Schottky conductions at low and high applied voltages, respectively. Trap levels in the oxide band gap, composed of both exponential and localized distributions, were extracted by using the differential method. The dielectric constant obtained from Schottky conduction was 27 and was consistent with the C-V results.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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