具有纠错功能的动态电流模式多值MOS存储器

[1992] Proceedings The Twenty-Second International Symposium on Multiple-Valued Logic Pub Date : 1992-05-27 DOI:10.1109/ISMVL.1992.186797

Edward K. F. Lee, P. Gulak

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引用次数: 13

摘要

提出了一种动态电流模多值MOS存储器的设计方法，该存储器采用纠错技术来提高噪声裕度。它是基于电流复制和单斜率模数转换技术。通过在每个刷新周期中存储和比较其二进制表示的最低有效位来增加多值存储数据的噪声裕度。或者，对于给定的噪声裕度，可以增加精度位数。此外，该技术提供了噪声裕度和实现区域之间的设计权衡。

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Dynamic current-mode multi-valued MOS memory with error correction

The design of a dynamic current-mode multivalued MOS memory, with error correction used to increase the noise margins, is presented. It is based on the current-copier and single-slope analog-to-digital conversion techniques. The noise margin of the multivalued stored data is increased by storing and comparing the least significant bits of its binary representation during each refresh cycle. Alternatively, the number of bits of precision can be increased for a given noise margin. Furthermore, this technique provides a design trade-off between noise margin and implementation area.<>

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来源期刊

[1992] Proceedings The Twenty-Second International Symposium on Multiple-Valued Logic

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