{"title":"电感供电有源整流器结构的性能分析","authors":"Q. Low, Mi Zhou, L. Siek","doi":"10.1109/ISICIR.2016.7829700","DOIUrl":null,"url":null,"abstract":"In this study, two active rectifier structures which are the full-wave rectifier and the two-stage rectifier for inductively powered application are analyzed and presented. This paper provides a precise analysis on the differences between the two structures and investigates the best load condition for the maximal performance in each of the structures respectively. Mathematical equations are derived to model the power losses and the power conversion efficiency. Moreover, the estimated values from the derived equations are shown to be tallied with the simulation results. Both of the structures are fabricated in standard CMOS 0.18µm AMS process. Simulation results show that they achieve a peak efficiency of 96.8% and 97.4% respectively at the frequency of 125 kHz with varying AC amplitude of 1.2V–2.5V.","PeriodicalId":159343,"journal":{"name":"2016 International Symposium on Integrated Circuits (ISIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Performance analysis on active rectifier structures for inductively powered application\",\"authors\":\"Q. Low, Mi Zhou, L. Siek\",\"doi\":\"10.1109/ISICIR.2016.7829700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, two active rectifier structures which are the full-wave rectifier and the two-stage rectifier for inductively powered application are analyzed and presented. This paper provides a precise analysis on the differences between the two structures and investigates the best load condition for the maximal performance in each of the structures respectively. Mathematical equations are derived to model the power losses and the power conversion efficiency. Moreover, the estimated values from the derived equations are shown to be tallied with the simulation results. Both of the structures are fabricated in standard CMOS 0.18µm AMS process. Simulation results show that they achieve a peak efficiency of 96.8% and 97.4% respectively at the frequency of 125 kHz with varying AC amplitude of 1.2V–2.5V.\",\"PeriodicalId\":159343,\"journal\":{\"name\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISICIR.2016.7829700\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on Integrated Circuits (ISIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISICIR.2016.7829700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文分析和介绍了两种有源整流器结构，即全波整流器和感应供电用的两级整流器。本文对两种结构之间的差异进行了精确的分析，并分别探讨了每种结构实现最大性能的最佳荷载条件。推导了功率损耗和功率转换效率的数学方程。推导出的方程的估计值与仿真结果吻合较好。这两种结构都采用标准CMOS 0.18µm AMS工艺制造。仿真结果表明，在交流幅值为1.2 v ~ 2.5 v的125 kHz频率下，它们的峰值效率分别为96.8%和97.4%。
Performance analysis on active rectifier structures for inductively powered application
In this study, two active rectifier structures which are the full-wave rectifier and the two-stage rectifier for inductively powered application are analyzed and presented. This paper provides a precise analysis on the differences between the two structures and investigates the best load condition for the maximal performance in each of the structures respectively. Mathematical equations are derived to model the power losses and the power conversion efficiency. Moreover, the estimated values from the derived equations are shown to be tallied with the simulation results. Both of the structures are fabricated in standard CMOS 0.18µm AMS process. Simulation results show that they achieve a peak efficiency of 96.8% and 97.4% respectively at the frequency of 125 kHz with varying AC amplitude of 1.2V–2.5V.
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