{"title":"利用非线性CAD软件研究微波放大器的幅相噪声","authors":"A. Krutov, V. Mitlin, A. Rebrov","doi":"10.1109/CRMICO.2000.1255872","DOIUrl":null,"url":null,"abstract":"In the present article the research results of amplitude and phase noise of amplifiers with GaAs transistors with a Schottky barrier are submitted. Their dependence on input signal level and physical properties of a field-effect transistor (breakdown voltages and gate widths) is shown. The research results allow one to forecast behavior of amplitude and phase noise of amplifiers, not resorting to labour-consuming measurements, to optimize structure of radar transmitters depending on specificity of their usage in a different range of Doppler signals.","PeriodicalId":387003,"journal":{"name":"2000 10th International Crimean Microwave Conference. \"Microwave and Telecommunication Technology\". Conference Proceedings (IEEE Cat. No.00EX415)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The research of microwave amplifier amplitude and phase noise using nonlinear CAD software\",\"authors\":\"A. Krutov, V. Mitlin, A. Rebrov\",\"doi\":\"10.1109/CRMICO.2000.1255872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present article the research results of amplitude and phase noise of amplifiers with GaAs transistors with a Schottky barrier are submitted. Their dependence on input signal level and physical properties of a field-effect transistor (breakdown voltages and gate widths) is shown. The research results allow one to forecast behavior of amplitude and phase noise of amplifiers, not resorting to labour-consuming measurements, to optimize structure of radar transmitters depending on specificity of their usage in a different range of Doppler signals.\",\"PeriodicalId\":387003,\"journal\":{\"name\":\"2000 10th International Crimean Microwave Conference. \\\"Microwave and Telecommunication Technology\\\". Conference Proceedings (IEEE Cat. No.00EX415)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 10th International Crimean Microwave Conference. \\\"Microwave and Telecommunication Technology\\\". Conference Proceedings (IEEE Cat. No.00EX415)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2000.1255872\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 10th International Crimean Microwave Conference. \"Microwave and Telecommunication Technology\". Conference Proceedings (IEEE Cat. No.00EX415)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2000.1255872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The research of microwave amplifier amplitude and phase noise using nonlinear CAD software
In the present article the research results of amplitude and phase noise of amplifiers with GaAs transistors with a Schottky barrier are submitted. Their dependence on input signal level and physical properties of a field-effect transistor (breakdown voltages and gate widths) is shown. The research results allow one to forecast behavior of amplitude and phase noise of amplifiers, not resorting to labour-consuming measurements, to optimize structure of radar transmitters depending on specificity of their usage in a different range of Doppler signals.