A radiation-hard layout structure to control back-gate biases in a 65 nm thin-BOX FDSOI process

We propose a radiation-hard layout structure to control back-gate biases for thin-BOX FDSOI. The structure with fixed back-gate bias has strongest against soft errors, while the structure with P+ and N+ diffusions under power and ground rails makes flip-flops stronger against soft errors with back-gate bias controllability than the conventional structure without P+ and N+ diffusions. The test chip was fabricated by 65 nm bulk and thin-BOX FDSOI processes. The experimental results with α sources reveals that the structure with diffusions is effective to supress soft errors on the thin-BOX process. But it is not effective on the bulk process.