可配置结构和温度传感器中的有机二极管实现

R. Ozgun, H. Katz, A. Andreou
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引用次数: 1

摘要

在本文中,我们报道了基于有机半导体的二极管,以及用于可配置二极管阵列和传感器的绝缘体上硅(SOI)与有机场效应晶体管(OFET)的集成技术。我们利用垂直有机二极管方法,其中一层有机半导体(并五苯)夹在Au和Al电极之间,这样一个电极(Au)与并五苯层形成同质结并允许空穴注入,另一方面,Al电极和并五苯偶因其功函数差异而形成异质结,该结阻碍了空穴的注入。所提出的设计流程仅依赖于基本的微制造工艺,如光刻和物理气相沉积,而新的制造技术允许在SOI衬底上制作导电硅栅极岛,并简化了通孔和互连的图像化和沉积,以实现底部栅极OFET配置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Organic diode implementations in configurable architectures and temperature sensors
In this paper, we report organic semiconductor based diodes, the silicon-on-insulator (SOI) integration technique with organic field effect transistors (OFET) for configurable diode arrays and sensors. We utilize the vertical organic diode approach, in which a layer of organic semiconductor (pentacene) is sandwiched between Au- and Al-electrodes such that one of the electrodes (Au) creates a homojunction with pentacene layer and permits the hole injection, on the other hand Al electrode and pentacene couple creates a heterojunction because of their work function difference and this junction blocks the injection of holes. Proposed design flow relies on only basic microfabrication processes such as photolithography and physical vapor deposition and the novel fabrication technique allows patterning of conductive silicon gate islands on the SOI subtrate and eases the via and interconnect patterning and deposition for a bottom-gate OFET configuration.
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