{"title":"可配置结构和温度传感器中的有机二极管实现","authors":"R. Ozgun, H. Katz, A. Andreou","doi":"10.1109/MAMNA.2013.6557231","DOIUrl":null,"url":null,"abstract":"In this paper, we report organic semiconductor based diodes, the silicon-on-insulator (SOI) integration technique with organic field effect transistors (OFET) for configurable diode arrays and sensors. We utilize the vertical organic diode approach, in which a layer of organic semiconductor (pentacene) is sandwiched between Au- and Al-electrodes such that one of the electrodes (Au) creates a homojunction with pentacene layer and permits the hole injection, on the other hand Al electrode and pentacene couple creates a heterojunction because of their work function difference and this junction blocks the injection of holes. Proposed design flow relies on only basic microfabrication processes such as photolithography and physical vapor deposition and the novel fabrication technique allows patterning of conductive silicon gate islands on the SOI subtrate and eases the via and interconnect patterning and deposition for a bottom-gate OFET configuration.","PeriodicalId":369463,"journal":{"name":"2013 Microsystems for Measurement and Instrumentation: Fulfilling the Promise (MAMNA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Organic diode implementations in configurable architectures and temperature sensors\",\"authors\":\"R. Ozgun, H. Katz, A. Andreou\",\"doi\":\"10.1109/MAMNA.2013.6557231\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report organic semiconductor based diodes, the silicon-on-insulator (SOI) integration technique with organic field effect transistors (OFET) for configurable diode arrays and sensors. We utilize the vertical organic diode approach, in which a layer of organic semiconductor (pentacene) is sandwiched between Au- and Al-electrodes such that one of the electrodes (Au) creates a homojunction with pentacene layer and permits the hole injection, on the other hand Al electrode and pentacene couple creates a heterojunction because of their work function difference and this junction blocks the injection of holes. Proposed design flow relies on only basic microfabrication processes such as photolithography and physical vapor deposition and the novel fabrication technique allows patterning of conductive silicon gate islands on the SOI subtrate and eases the via and interconnect patterning and deposition for a bottom-gate OFET configuration.\",\"PeriodicalId\":369463,\"journal\":{\"name\":\"2013 Microsystems for Measurement and Instrumentation: Fulfilling the Promise (MAMNA)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Microsystems for Measurement and Instrumentation: Fulfilling the Promise (MAMNA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAMNA.2013.6557231\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Microsystems for Measurement and Instrumentation: Fulfilling the Promise (MAMNA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAMNA.2013.6557231","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Organic diode implementations in configurable architectures and temperature sensors
In this paper, we report organic semiconductor based diodes, the silicon-on-insulator (SOI) integration technique with organic field effect transistors (OFET) for configurable diode arrays and sensors. We utilize the vertical organic diode approach, in which a layer of organic semiconductor (pentacene) is sandwiched between Au- and Al-electrodes such that one of the electrodes (Au) creates a homojunction with pentacene layer and permits the hole injection, on the other hand Al electrode and pentacene couple creates a heterojunction because of their work function difference and this junction blocks the injection of holes. Proposed design flow relies on only basic microfabrication processes such as photolithography and physical vapor deposition and the novel fabrication technique allows patterning of conductive silicon gate islands on the SOI subtrate and eases the via and interconnect patterning and deposition for a bottom-gate OFET configuration.