基于fpga的逻辑电路中重离子诱导失效的表征与分类

S. Gao, C. Cai, Bingxu Ning, Ze He, Jie Liu
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引用次数: 0

摘要

本文对基于静态随机存取存储器的现场可编程门阵列(fpga)的失效模式和影响进行了准确的表征和分类。利用fpga的逻辑资源,设计了五种具有代表性的移位寄存器链,分别采用非强化和冗余强化策略。进行了不同入射条件下的重离子试验,对失效影响进行了分类和探讨。失效的硬化电路和4位聚类误差表明,电荷共享效应和宽电荷磁道面积成为小特征尺寸fpga的主要关注点。本地时钟缓冲器和逻辑单元之间的距离不同严重影响了FPGA系统的可靠性。此外,成功地对外围电路引起的各种聚类和突发错误进行了分类,并对较严重的失效模式和机制进行了介绍和讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization and Classification of Heavy Ion Induced Failures in FPGA-based Logical Circuits
This paper proposes an accurate characterization and classification of failure modes and influences that occur in Static Random-Access Memory-based Field Programmable Gate Arrays (FPGAs). Five representative shift register chains with unhardened and redundancy hardened strategies are designed by utilizing logical resources of FPGAs. The heavy ion tests under different incident conditions are performed to classify and explore the failure impacts. The failed hardened circuits and 4-bit clustered errors reveal that the charge sharing effect and wide charge track area become a major concern for small feature size FPGAs. The local clock buffers and logical cells with different distances seriously affect the reliability of FPGA systems. In addition, the peripheral circuit induced different clustered and burst errors are successfully classified, and the worse failure modes and mechanisms are presented and discussed.
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