单晶圆制程对晶圆厂周期的影响

S. Wood
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引用次数: 2

摘要

快速热加工已经成为硅化物退火等工艺的惯例,并且正在研究作为现代CMOS工艺流程中几乎所有其他热加工的替代方案。单晶圆清洗也是一个广泛的研究和发展领域,无论是在工业和学术界,虽然单晶圆清洗是不成熟的技术,如快速热处理。本文的目的是展示单晶圆处理如何改善晶圆厂的生产时间。生产时间(也称为周期时间)是从晶圆片进入晶圆厂开始加工到所有晶圆片加工完成并准备好进行最终探测的时间长度。本文只考虑前端处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The impact of single-wafer processing on fab cycle time
Rapid thermal processing is already the convention for processes such as silicide annealing, and is being studied as an alternative for virtually every other thermal process in modern CMOS process flows. Single-wafer cleaning is also a broad area of research and development, both in industry and academia, although single-wafer cleaning is not as mature a technology as rapid thermal processing. This paper's objective is to show how single-wafer processing can improve a fab's throughput time. Throughput time (also called cycle time) is the length of time that passes from when a wafer enters a fab to begin processing until all wafer processing is completed and the wafer is ready for final probe. This paper only considers front-end processing.
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