用于 5G 相控阵的 28 GHz CMOS 宽带单路功率放大器，P1dB 为 17.4 dBm

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC) Pub Date : 2018-09-01 DOI:10.1109/ESSCIRC.2018.8494246

Chongyu Yu, Jun Feng, Dixian Zhao

{"title":"用于 5G 相控阵的 28 GHz CMOS 宽带单路功率放大器，P1dB 为 17.4 dBm","authors":"Chongyu Yu, Jun Feng, Dixian Zhao","doi":"10.1109/ESSCIRC.2018.8494246","DOIUrl":null,"url":null,"abstract":"This paper reports a fully integrated broadband and linear power amplifier (PA) for 5G phased-array. Weakly-and strongly-coupled transformers are compared and analyzed in detail. The output strongly-coupled transformer is designed to transfer maximum power. The inter-stage weakly-coupled transformer is optimized to broaden the bandwidth. Besides, linearity is highly improved by operating the PA in deep class AB region. Designed and implemented in 65-nm CMOS process with 1V supply, the two-stage PA delivers a maximum small-signal gain of 19 dB. Maximum 1-dB compressed power (P1dB) of 17.4 dBm and saturated output power (PSAT) of 18 dBm are measured at 28 GHz. The power-added efficiency (PAE) at P1dB is 26.5%. The measured P1dBis above 16 dBm from 23 to 32 GHz, covering potential 5G bands worldwide around 28 GHz.","PeriodicalId":355210,"journal":{"name":"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A 28-GHz CMOS Broadband Single-Path Power Amplifier with 17.4-dBm P1dB for 5G Phased-Array\",\"authors\":\"Chongyu Yu, Jun Feng, Dixian Zhao\",\"doi\":\"10.1109/ESSCIRC.2018.8494246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a fully integrated broadband and linear power amplifier (PA) for 5G phased-array. Weakly-and strongly-coupled transformers are compared and analyzed in detail. The output strongly-coupled transformer is designed to transfer maximum power. The inter-stage weakly-coupled transformer is optimized to broaden the bandwidth. Besides, linearity is highly improved by operating the PA in deep class AB region. Designed and implemented in 65-nm CMOS process with 1V supply, the two-stage PA delivers a maximum small-signal gain of 19 dB. Maximum 1-dB compressed power (P1dB) of 17.4 dBm and saturated output power (PSAT) of 18 dBm are measured at 28 GHz. The power-added efficiency (PAE) at P1dB is 26.5%. The measured P1dBis above 16 dBm from 23 to 32 GHz, covering potential 5G bands worldwide around 28 GHz.\",\"PeriodicalId\":355210,\"journal\":{\"name\":\"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2018.8494246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2018.8494246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 17

摘要

本文报告了用于 5G 相控阵的全集成宽带线性功率放大器（PA）。文中对弱耦合和强耦合变压器进行了比较和详细分析。输出强耦合变压器旨在传输最大功率。对级间弱耦合变压器进行了优化，以拓宽带宽。此外，通过在深度 AB 类区域运行功率放大器，线性度也得到了极大改善。两级功率放大器采用 65 纳米 CMOS 工艺设计和实现，电源电压为 1V，最大小信号增益为 19dB。在 28 GHz 频率下测得的最大 1 dB 压缩功率 (P1dB) 为 17.4 dBm，饱和输出功率 (PSAT) 为 18 dBm。P1dB 时的功率附加效率 (PAE) 为 26.5%。所测得的 P1dB 在 23 至 32 GHz 范围内均高于 16 dBm，覆盖了全球 28 GHz 附近的潜在 5G 频段。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 28-GHz CMOS Broadband Single-Path Power Amplifier with 17.4-dBm P1dB for 5G Phased-Array

This paper reports a fully integrated broadband and linear power amplifier (PA) for 5G phased-array. Weakly-and strongly-coupled transformers are compared and analyzed in detail. The output strongly-coupled transformer is designed to transfer maximum power. The inter-stage weakly-coupled transformer is optimized to broaden the bandwidth. Besides, linearity is highly improved by operating the PA in deep class AB region. Designed and implemented in 65-nm CMOS process with 1V supply, the two-stage PA delivers a maximum small-signal gain of 19 dB. Maximum 1-dB compressed power (P1dB) of 17.4 dBm and saturated output power (PSAT) of 18 dBm are measured at 28 GHz. The power-added efficiency (PAE) at P1dB is 26.5%. The measured P1dBis above 16 dBm from 23 to 32 GHz, covering potential 5G bands worldwide around 28 GHz.

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来源期刊

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)

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