一个10b 50MS/s 90nm CMOS瘦形ADC使用可变参考的CIS应用

Jun-Sang Park, Tai-Ji An, Yongmin Kim, Suk-Hee Cho, Hyun-Sun Shim, Woo-Jin Jang, Yongsik Shin, Jun-Hyup Lee, G. Ahn, Seunghoon Lee
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引用次数: 1

摘要

本工作提出了一种适用于各种CIS应用的小型化10b 50MS/s 90nm CMOS四步流水线ADC。该ADC将可变信号摆幅范围为1.12至1.60Vp-p的模拟信号转换为基于低压的数字数据。所提出的片上I/V参考电路使用单个外部控制电压产生具有固定共模电平的所需可变参考电压。在90nm CMOS工艺中实现的原型ADC的最大SNDR和SFDR分别为55.1dB和65.6dB。该ADC的有效芯片面积为0.23mm2,在50MS/s下使用2.5V模拟电源和1.2V数字电源的双电源电压,功耗为17.5mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 10b 50MS/s 90nm CMOS skinny-shape ADC using variable references for CIS applications
This work proposes a skinny-shape 10b 50MS/s 90nm CMOS four-step pipeline ADC for various CIS applications. The proposed ADC converts analog signals in variable signal-swing ranges of 1.12 to 1.60Vp-p into low voltage-based digital data. The proposed on-chip I/V reference circuits generate the required variable reference voltages with a fixed common-mode level using a single external control voltage. The prototype ADC implemented in a 90nm CMOS process shows a maximum SNDR and SFDR of 55.1dB and 65.6dB, respectively. The ADC with an active die area of 0.23mm2 consumes 17.5mW at 50MS/s using dual supply voltages of 2.5V for analog and 1.2V for digital.
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