基于Gm的电压模式电容倍增器

G. Bonteanu, A. Cracan, L. Goras
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引用次数: 2

摘要

提出了一种新的基于晶体管的电压型电容倍增电路解决方案。该解决方案采用米勒效应,围绕一个电压放大器实现跨导放大器,另一个跨导作为负载阻抗,这样两个跨导的比值定义了倍增系数。由于跨导可调性,倍增系数可在很宽的范围内调节。与基于电流模式的gm实现相比,所提出的解决方案在低频行为方面具有重要优势,推荐用于频率补偿应用的电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gm Based Voltage Mode Capacitance Multiplier
A new transconductor based circuit solution for voltage mode capacitance multiplication is proposed. The solution employs the Miller effect around a voltage amplifier implemented as a transconductance amplifier with another transconductor acting as load impedance, such that the ratio of the two transconductances defines the multiplication factor. Due to transconductance tunability, the multiplication factor is adjustable in a wide range. The proposed solution offers an important advantage with regards to the low frequency behavior in comparison to a current mode Gm-based implementation, recommending the circuit for frequency compensation applications.
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