{"title":"射频应用中的MEMS解决方案","authors":"V. Joshi, R. Parkhurst, L. Morrell, P. Tornatta","doi":"10.1109/S3S.2013.6716536","DOIUrl":null,"url":null,"abstract":"MEMS devices are ideal tuning element since in a non-50 Ohm system, equivalent series resistance (ESR) is the primary source of losses in a tuning system. MEMS have less than 20% of the ESR of solid state devices and are on par with the best fixed-value passive components. Figure 2 shows the usable Q of Cavendish RF MEMS device for the frequency range and associated capacitance state.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"MEMS Solutions in RF applications\",\"authors\":\"V. Joshi, R. Parkhurst, L. Morrell, P. Tornatta\",\"doi\":\"10.1109/S3S.2013.6716536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MEMS devices are ideal tuning element since in a non-50 Ohm system, equivalent series resistance (ESR) is the primary source of losses in a tuning system. MEMS have less than 20% of the ESR of solid state devices and are on par with the best fixed-value passive components. Figure 2 shows the usable Q of Cavendish RF MEMS device for the frequency range and associated capacitance state.\",\"PeriodicalId\":219932,\"journal\":{\"name\":\"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2013.6716536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2013.6716536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MEMS devices are ideal tuning element since in a non-50 Ohm system, equivalent series resistance (ESR) is the primary source of losses in a tuning system. MEMS have less than 20% of the ESR of solid state devices and are on par with the best fixed-value passive components. Figure 2 shows the usable Q of Cavendish RF MEMS device for the frequency range and associated capacitance state.