{"title":"带陷阱的二极管的噪声特性","authors":"V. Harutunian, V. Buniatian","doi":"10.1049/IJ-SSED.1979.0032","DOIUrl":null,"url":null,"abstract":"The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The noise characteristics of baritt diodes with traps\",\"authors\":\"V. Harutunian, V. Buniatian\",\"doi\":\"10.1049/IJ-SSED.1979.0032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED.1979.0032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1979.0032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The noise characteristics of baritt diodes with traps
The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.
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