Study of the influence of parameters to explore the Properties of Graphene Nanoribbon Field Effect Transistors

Graphene based devices are impelling the innovations for the final implementation of flexible electronic devices within new perspectives of the future technological developments. Specially, GNRFET has placed in a superior position due to the existence of finite bandgap and the ability to tune the same by a simple way (of varying the width). Therefore, we have explored the properties of GNRFET by using some analytic approach with a view to assess its efficacy as a Field Effect Transistor (FET). Reduction of a 2-dimensional (2D) Poisson equation to a one-dimensional (1D) form in an effective manner is the main of focus of this method. The approach was used to study the influence of geometrical and electrical parameters on I-V characteristics of the GNRFET. The results of this work pave the way for the possibilities for device engineers to characterize GNRFETs based on the requirements of a specific device application. The resulting convergence of the inflection point is an interesting feature of our study.The existence of a critical voltage, beyond which the current rises in its value with temperature, is an pre-eminent feature of our GNRFET model.