16位1MS/s 44mW逐次逼近寄存器模数转换器,信噪比为94.3dB

Yingying Chi, Dongmei Li, Zhihua Wang
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引用次数: 6

摘要

提出了一种相对低功耗的16位1MS/s逐次逼近寄存器(SAR)模数转换器(ADC)。针对SAR ADC的典型结构,采用了抑制非线性失真的自举采样开关、降低功耗的动态比较器和保证转换精度的偏移校正等有效技术。针对电容失配引起的谐波失真,提出了片外搜索算法。仿真结果表明,在1MSamples/s、500KHz输入频率下,ADC的信噪比(SNDR)为94.3dB,功耗为44mW,电源电压为1.8V。采用0.18μm互补金属氧化物半导体(CMOS)工艺和金属-绝缘体-金属(MIM)电容,包含去耦电容的ADC铁芯占据了1.0mm×1.4mm的有效面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 16-bit 1MS/s 44mW successive approximation register analog-to-digital converter achieving signal-to-noise-and-distortion-ratio of 94.3dB
A relatively low-power 16-bit 1MS/s successive approximation register (SAR) analog-to-digital converter (ADC) is presented in this paper. Based on the typical structure of SAR ADC, some effective techniques including bootstrapped sampling-switch used to suppress nonlinear distortion, dynamic comparator to reduce power dissipation and the offset-calibration to ensure conversion accuracy have been employed. The off-chip search algorithm is developed against the harmonic distortion resulted from capacitor mismatch. Simulation with parasitism extracted from the layout demonstrates that the ADC achieves signal-to-noise-and-distortion-ratio (SNDR) of 94.3dB at 1MSamples/s, 500KHz input frequency and consumes 44mW from a 1.8V power supply. With the 0.18μm complementary metal-oxide semiconductor (CMOS) process and metal-insulator-metal (MIM) capacitor, the ADC core including decoupling capacitors occupies an active area of 1.0mm×1.4mm.
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