W. Choi, Yang Lv, Hoonki Kim, Jianping Wang, C. Kim
{"title":"基于磁隧道结电压相关开关概率的8位模数转换器","authors":"W. Choi, Yang Lv, Hoonki Kim, Jianping Wang, C. Kim","doi":"10.1109/VLSIT.2015.7223662","DOIUrl":null,"url":null,"abstract":"In this work, we have experimentally demonstrated for the first time, an Analog-to-Digital Converter (ADC) based on the unique voltage-dependent switching probability of a Magnetic Tunnel Junction (MTJ). The switching probability was calculated by applying repetitive voltage pulses and measuring the resolved MTJ states in each sampling time window. Temperature sensitivity and MgO breakdown issues were minimized by optimizing the voltage pulse width. Circuit level techniques were utilized to improve the ADC linearity and increase the input voltage range. The proposed ADC achieves an 8-bit resolution with excellent linearity at 30 and 85°C.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An 8-bit Analog-to-Digital Converter based on the voltage-dependent switching probability of a Magnetic Tunnel Junction\",\"authors\":\"W. Choi, Yang Lv, Hoonki Kim, Jianping Wang, C. Kim\",\"doi\":\"10.1109/VLSIT.2015.7223662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we have experimentally demonstrated for the first time, an Analog-to-Digital Converter (ADC) based on the unique voltage-dependent switching probability of a Magnetic Tunnel Junction (MTJ). The switching probability was calculated by applying repetitive voltage pulses and measuring the resolved MTJ states in each sampling time window. Temperature sensitivity and MgO breakdown issues were minimized by optimizing the voltage pulse width. Circuit level techniques were utilized to improve the ADC linearity and increase the input voltage range. The proposed ADC achieves an 8-bit resolution with excellent linearity at 30 and 85°C.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An 8-bit Analog-to-Digital Converter based on the voltage-dependent switching probability of a Magnetic Tunnel Junction
In this work, we have experimentally demonstrated for the first time, an Analog-to-Digital Converter (ADC) based on the unique voltage-dependent switching probability of a Magnetic Tunnel Junction (MTJ). The switching probability was calculated by applying repetitive voltage pulses and measuring the resolved MTJ states in each sampling time window. Temperature sensitivity and MgO breakdown issues were minimized by optimizing the voltage pulse width. Circuit level techniques were utilized to improve the ADC linearity and increase the input voltage range. The proposed ADC achieves an 8-bit resolution with excellent linearity at 30 and 85°C.