p掺杂多晶硅NEMS的压阻转导优化

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI:10.1109/ESSDERC.2015.7324735

I. Ouerghi, W. Ludurczak, L. Duraffourg, C. Ladner, A. I. Oudrhiri, P. Gergaud, M. Vinet, T. Ernst

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引用次数: 0

摘要

本文对柱状多晶硅纳米线(NW) NEMS器件在高掺杂水平下的纵向规系数(GF)进行了深入的研究。结果表明，当浓度约为1020 cm-3时，可获得较高的GF(大于30)。这一结果对于大批量、低制造成本的NEMS器件来说是非常有希望的。这种高GF是由于与c-Si相比，多晶硅具有特殊的压阻性。我们模拟了多晶硅的机械性能，并将其与电测量结果进行了比较，以预测高GF时的最佳掺杂浓度。基于[1]中提出的一种新的非破坏性方法，GF的实验提取已经直接在NWs规范上进行。

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Piezoresistive transduction optimization of p-doped poly-Silicon NEMS

This paper presents a thorough investigation of the longitudinal gauge factor (GF) at high doping level in columnar polycrystalline-Silicon (poly-Si) nanowire (NW) NEMS devices. It is shown that a high GF (more than 30) can be obtained with concentration about 1020 cm-3. This result is very promising for high volume, low fabrication cost NEMS devices. This high GF is due to the specific piezoresistive behavior of poly-Si when compared to c-Si. We modeled the mechanical properties of the poly-Si and compared them to electrical measurements in order to predict the optimum dopant concentration for high GF. The experimental extraction of the GF has been performed directly on NWs gauge thanks to a new non-destructive method presented in [1].

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2015 45th European Solid State Device Research Conference (ESSDERC)

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