利用c元构建具有完全双节点抗扰能力的闩锁设计

Yuta Yamamoto, K. Namba
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引用次数: 10

摘要

由于超大规模集成电路的小型化和高集成度,软误差的发生率增加了。软误差是由a射线和高能中子辐射撞击引起的暂时现象。随着超大规模集成电路规模的不断缩小,不仅需要考虑单节点扰流(SNU)的发生,还需要考虑双节点扰流(DNU)的发生。现有的高性能、低成本和DNU容忍锁存器设计(hdtll)不能完全容忍DNU。本文提出了一种DNU容限锁存器,通过在hdtll锁存器上增加一些晶体管来解决这一问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Construction of Latch Design with Complete Double Node Upset Tolerant Capability Using C-Element
Due to VLSI downsizing and high integration, the incidence of soft error has increased. The soft error is a temporary event caused by striking of a-rays and high energy neutron radiation. Since the scale of VLSI has become smaller in recent development, it is necessary to consider the occurrence of not only single node upset (SNU) but also double node upset (DNU). The existing High-performance, Low-cost, and DNU Tolerant Latch design (HLDTL) does not completely tolerate DNU. This paper presents a DNU tolerant latch to solve this problem by adding some transistors to the HLDTL latch.
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