高温电子采用硅技术

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC Pub Date : 1996-02-08 DOI:10.1109/ISSCC.1996.488735

F. Trofimenkoff, I. Finvers, R. Smallwood

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引用次数: 18

摘要

本文介绍了用于井下油气田应用的精密CMOS电路的实现技术。重点是批量CMOS电路，以便在标准的5v数字工艺中制造完整的混合模拟/数字精密单片数据采集系统。迄今为止成功的设计包括3 /spl μ m CMOS中175/spl°C绝对精度为15 b的A/D转换器，1.2 /spl μ l μ m CMOS中200/spl°C低偏置电压和电流的自动调零运放，以及1.2 /spl μ l μ m CMOS中具有输入偏置电压和偏置电流误差抑制的电阻桥式传感器的高分辨率A/D系统。

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High temperature electronics using silicon technology

In this paper, techniques used to realize precision CMOS circuits for use in down-hole oil and gas field applications are described. The focus is on bulk CMOS circuits so that complete mixed analog/digital precision monolithic data acquisition systems can be fabricated in a standard 5 V digital process. Successful designs to date include an A/D converter with 15 b absolute accuracy at 175/spl deg/C in 3 /spl mu/m CMOS, an autozeroed op amp with low-offset voltage and current at 200/spl deg/C in 1.2 /spl mu/m CMOS, and a high-resolution A/D system for resistance bridge transducers incorporating input offset voltage and bias current error suppression in 1.2 /spl mu/m CMOS.

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来源期刊

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC

自引率

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