先进功率mosfet的集成开发和制造方法

Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium Pub Date : 1997-10-13 DOI:10.1109/IEMT.1997.626867

M. Kasem

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引用次数: 0

摘要

本文简要阐述了集成产品开发(IPD)作为新产品开发的有效框架的原理。然而，管理部门执行IPD的成功取决于当前发展进程中的一些根本变化。其中包括强调团队合作和扩大制造业的作用，以及将可制造性设计(DFM)作为业务驱动程序的应用。本文还介绍了采用IPD原理为超高密度沟槽mosfet开发的8引脚功率TSSOP封装的优越特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Integrated development and manufacturing methodology for advanced power MOSFETs

This paper briefly illustrates the principles of Integrated Product Development (IPD) as an effective framework for new product development. However, the success of management implementing IPD is dependent on a number of fundamental changes in the current development process. These include emphasis on teamwork and the expansion of the role of manufacturing, as well as the application of Design for Manufacturability (DFM) as a business driver. The paper also describes the superior characteristics of 8-lead power TSSOP packages, which were developed for ultra high density Trench MOSFETs using IPD principles.

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Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium

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