G. Curatola, Andreas Kassmanhuber, S. Yuferev, J. Franke, G. Pozzovivo, S. Lavanga, G. Prechtl, T. Detzel, O. Haeberlen
{"title":"GaN虚拟原型:从陷阱建模到系统级级级代码优化","authors":"G. Curatola, Andreas Kassmanhuber, S. Yuferev, J. Franke, G. Pozzovivo, S. Lavanga, G. Prechtl, T. Detzel, O. Haeberlen","doi":"10.1109/ESSDERC.2014.6948829","DOIUrl":null,"url":null,"abstract":"The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"GaN virtual prototyping: From traps modeling to system-level cascode optimization\",\"authors\":\"G. Curatola, Andreas Kassmanhuber, S. Yuferev, J. Franke, G. Pozzovivo, S. Lavanga, G. Prechtl, T. Detzel, O. Haeberlen\",\"doi\":\"10.1109/ESSDERC.2014.6948829\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948829\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN virtual prototyping: From traps modeling to system-level cascode optimization
The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.