{"title":"58 nW±35 ppm/°C振荡器,用于物联网无电池传感器应用","authors":"Milad Salehi, Mohamed Ali, Y. Savaria, M. Sawan","doi":"10.1109/ICECS49266.2020.9294792","DOIUrl":null,"url":null,"abstract":"We present in this paper a battery-less sensor structure with energy harvesting in which an antenna is used for both collecting the RF signals and as a sensing element. Also, an ultra-low-power oscillator with low sensitivity to temperature variations has been designed to generate a clock signal for the proper operation of the proposed sensor design. This oscillator is intended for ultra-low power and low-frequency applications. It consumes only 58 nW of power from a 1 V supply while occupying 190 μm x 120 μm of silicon area. In addition, it shows temperature sensitivity of ± 35 ppm/°C over temperatures ranging from −40 to 85 °C. The proposed structure has been designed and simulated with a 0.18 μm standard CMOS technology. The proper functionality of the presented design has been validated through post-layout simulation results.","PeriodicalId":404022,"journal":{"name":"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 58 nW ± 35 ppm/°C Oscillator for IoT Battery-less Sensor Applications\",\"authors\":\"Milad Salehi, Mohamed Ali, Y. Savaria, M. Sawan\",\"doi\":\"10.1109/ICECS49266.2020.9294792\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present in this paper a battery-less sensor structure with energy harvesting in which an antenna is used for both collecting the RF signals and as a sensing element. Also, an ultra-low-power oscillator with low sensitivity to temperature variations has been designed to generate a clock signal for the proper operation of the proposed sensor design. This oscillator is intended for ultra-low power and low-frequency applications. It consumes only 58 nW of power from a 1 V supply while occupying 190 μm x 120 μm of silicon area. In addition, it shows temperature sensitivity of ± 35 ppm/°C over temperatures ranging from −40 to 85 °C. The proposed structure has been designed and simulated with a 0.18 μm standard CMOS technology. The proper functionality of the presented design has been validated through post-layout simulation results.\",\"PeriodicalId\":404022,\"journal\":{\"name\":\"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS49266.2020.9294792\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS49266.2020.9294792","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 58 nW ± 35 ppm/°C Oscillator for IoT Battery-less Sensor Applications
We present in this paper a battery-less sensor structure with energy harvesting in which an antenna is used for both collecting the RF signals and as a sensing element. Also, an ultra-low-power oscillator with low sensitivity to temperature variations has been designed to generate a clock signal for the proper operation of the proposed sensor design. This oscillator is intended for ultra-low power and low-frequency applications. It consumes only 58 nW of power from a 1 V supply while occupying 190 μm x 120 μm of silicon area. In addition, it shows temperature sensitivity of ± 35 ppm/°C over temperatures ranging from −40 to 85 °C. The proposed structure has been designed and simulated with a 0.18 μm standard CMOS technology. The proper functionality of the presented design has been validated through post-layout simulation results.