W. Arfaoui, X. Federspiel, P. Mora, M. Rafik, D. Roy, A. Bravaix
{"title":"热载流子和偏置温度损伤下先进CMOS节点缺陷性质和定位的实验分析","authors":"W. Arfaoui, X. Federspiel, P. Mora, M. Rafik, D. Roy, A. Bravaix","doi":"10.1109/IIRW.2013.6804163","DOIUrl":null,"url":null,"abstract":"We present a multi techno trend of HCI time acceleration and VD power law exponent for various processes. We review the results of defect localization analysis based on a rigorous correlation and interaction study for different HCI degradation modes and BTI. Finally, we check HCI impact on TDDB to get an accurate comprehension about defect nature. Hence, we point out the necessity of new appropriate reliability modeling specially for recent ultra-short channel technologies.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Experimental analysis of defect nature and localization under hot-carrier and bias temperature damage in advanced CMOS nodes\",\"authors\":\"W. Arfaoui, X. Federspiel, P. Mora, M. Rafik, D. Roy, A. Bravaix\",\"doi\":\"10.1109/IIRW.2013.6804163\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a multi techno trend of HCI time acceleration and VD power law exponent for various processes. We review the results of defect localization analysis based on a rigorous correlation and interaction study for different HCI degradation modes and BTI. Finally, we check HCI impact on TDDB to get an accurate comprehension about defect nature. Hence, we point out the necessity of new appropriate reliability modeling specially for recent ultra-short channel technologies.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804163\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental analysis of defect nature and localization under hot-carrier and bias temperature damage in advanced CMOS nodes
We present a multi techno trend of HCI time acceleration and VD power law exponent for various processes. We review the results of defect localization analysis based on a rigorous correlation and interaction study for different HCI degradation modes and BTI. Finally, we check HCI impact on TDDB to get an accurate comprehension about defect nature. Hence, we point out the necessity of new appropriate reliability modeling specially for recent ultra-short channel technologies.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
