{"title":"一个0.3 V, 4阶低通OTA-C滤波器,采用批量驱动技术,用于脑电图应用","authors":"Diksha Thakur, K. Sharma, Rajnish Sharma","doi":"10.1109/EDKCON56221.2022.10032944","DOIUrl":null,"url":null,"abstract":"Low-pass-filter (LPF) is one of the most important building blocks for the effective implementation of any wearable/non-invasive biological system. This manuscript, presents an ultra-low-power, low-voltage bulk-driven (BD) 4th order LPF circuit targeted for the detection of Electroencephalography (EEG) signal. The proposed LPF circuit works in the sub-threshold region to achieve low-power and low-noise operation. The simulated results obtained for proposed LPF CMOS in 180 nm technology node demonstrates -0.10 dB of dc-gain, 52.71 dB of dynamic range of (DR), 92 µVrms of input-referred noise (IRN) and 100 Hz of bandwidth. The LPF consumes power of 0.81 nW at 0.3 V of low-supply voltage. Using the most reasonable and relevant figure of merit (FOM), the proposed LPF circuit outperforms other modern nano-power LPF circuits and is most suitable for EEG acquisition systems.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 0.3 V, 4th order low-pass OTA-C filter using bulk-driven technique for EEG applications\",\"authors\":\"Diksha Thakur, K. Sharma, Rajnish Sharma\",\"doi\":\"10.1109/EDKCON56221.2022.10032944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-pass-filter (LPF) is one of the most important building blocks for the effective implementation of any wearable/non-invasive biological system. This manuscript, presents an ultra-low-power, low-voltage bulk-driven (BD) 4th order LPF circuit targeted for the detection of Electroencephalography (EEG) signal. The proposed LPF circuit works in the sub-threshold region to achieve low-power and low-noise operation. The simulated results obtained for proposed LPF CMOS in 180 nm technology node demonstrates -0.10 dB of dc-gain, 52.71 dB of dynamic range of (DR), 92 µVrms of input-referred noise (IRN) and 100 Hz of bandwidth. The LPF consumes power of 0.81 nW at 0.3 V of low-supply voltage. Using the most reasonable and relevant figure of merit (FOM), the proposed LPF circuit outperforms other modern nano-power LPF circuits and is most suitable for EEG acquisition systems.\",\"PeriodicalId\":296883,\"journal\":{\"name\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDKCON56221.2022.10032944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON56221.2022.10032944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.3 V, 4th order low-pass OTA-C filter using bulk-driven technique for EEG applications
Low-pass-filter (LPF) is one of the most important building blocks for the effective implementation of any wearable/non-invasive biological system. This manuscript, presents an ultra-low-power, low-voltage bulk-driven (BD) 4th order LPF circuit targeted for the detection of Electroencephalography (EEG) signal. The proposed LPF circuit works in the sub-threshold region to achieve low-power and low-noise operation. The simulated results obtained for proposed LPF CMOS in 180 nm technology node demonstrates -0.10 dB of dc-gain, 52.71 dB of dynamic range of (DR), 92 µVrms of input-referred noise (IRN) and 100 Hz of bandwidth. The LPF consumes power of 0.81 nW at 0.3 V of low-supply voltage. Using the most reasonable and relevant figure of merit (FOM), the proposed LPF circuit outperforms other modern nano-power LPF circuits and is most suitable for EEG acquisition systems.