{"title":"脉冲电子束和离子束对SiC薄膜的表面改性","authors":"S. Korenev, J. Huran, A. Kobzev","doi":"10.1109/SIM.1996.571092","DOIUrl":null,"url":null,"abstract":"The results of experimental investigation of surface modification of silicon carbide thin films by pulsed electron and ion beams are presented in this report. For experiments we use electron and ion beams with following parameters: kinetic energy 200-400 keV, pulse duration 300 ns, beam current for electrons 100-300 A, for ions 1-20 A. The presented results were obtained from RBS, ERD (elastic recoil detection) and IR spectroscopy.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface modification of SiC thin films by pulsed electron and ion beams\",\"authors\":\"S. Korenev, J. Huran, A. Kobzev\",\"doi\":\"10.1109/SIM.1996.571092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of experimental investigation of surface modification of silicon carbide thin films by pulsed electron and ion beams are presented in this report. For experiments we use electron and ion beams with following parameters: kinetic energy 200-400 keV, pulse duration 300 ns, beam current for electrons 100-300 A, for ions 1-20 A. The presented results were obtained from RBS, ERD (elastic recoil detection) and IR spectroscopy.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.571092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface modification of SiC thin films by pulsed electron and ion beams
The results of experimental investigation of surface modification of silicon carbide thin films by pulsed electron and ion beams are presented in this report. For experiments we use electron and ion beams with following parameters: kinetic energy 200-400 keV, pulse duration 300 ns, beam current for electrons 100-300 A, for ions 1-20 A. The presented results were obtained from RBS, ERD (elastic recoil detection) and IR spectroscopy.
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